MJE803 Todos los transistores

 

MJE803 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE803

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 750

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar MJE803

 

MJE803 Datasheet (PDF)

0.1. mje802 mje803.pdf Size:64K _st

MJE803
MJE803

MJE802MJE803SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJE802 and MJE803 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration and are mounted inJedec SOT-32 plastic package.They are intendedfor use in medium power linear and switchingapplications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE M

0.2. mje803g.pdf Size:126K _onsemi

MJE803
MJE803

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

 0.3. mje803t.pdf Size:212K _inchange_semiconductor

MJE803
MJE803

isc Silicon NPN Darlington Power Transistor MJE803TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw

0.4. mje800 mje801 mje802 mje803.pdf Size:118K _inchange_semiconductor

MJE803
MJE803

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for generalpurpose amplifier and lowspeed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to

 0.5. mje803.pdf Size:214K _inchange_semiconductor

MJE803
MJE803

isc Silicon NPN Darlington Power Transistor MJE803DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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