MJF127 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJF127

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 2

Encapsulados: TO220F

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MJF127 datasheet

 ..1. Size:267K  motorola
 mjf122 mjf127.pdf pdf_icon

MJF127

 0.1. Size:150K  onsemi
 mjf127g.pdf pdf_icon

MJF127

MJF122, MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127

 9.1. Size:189K  inchange semiconductor
 mjf122g.pdf pdf_icon

MJF127

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for general purpose amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXI

Otros transistores... MJE803T, MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, MJF10012, MJF122, A733, MJF13007, MJF15030, MJF15031, MJF16002, MJF16006A, MJF16010A, MJF16204, MJF16206