2N4347 Todos los transistores

 

2N4347 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4347

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.8 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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2N4347 datasheet

 ..1. Size:132K  mospec
2n4347 2n3442.pdf pdf_icon

2N4347

A A A

 ..2. Size:183K  inchange semiconductor
2n4347.pdf pdf_icon

2N4347

isc Silicon NPN Power Transistor 2N4347 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and

 0.1. Size:197K  comset
2n3442-2n4347.pdf pdf_icon

2N4347

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta

 9.1. Size:304K  general electric
2n433 2n434.pdf pdf_icon

2N4347

Otros transistores... 2N4312, 2N4313, 2N4314, 2N4315, 2N432, 2N433, 2N434, 2N4346, B647, 2N4348, 2N4349, 2N4350, 2N4354, 2N4355, 2N4356, 2N4357, 2N4358

 

 

 


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