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MJW16010 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJW16010
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 135 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 400 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO247
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MJW16010 Datasheet (PDF)

 ..1. Size:362K  motorola
mjw16010.pdf pdf_icon

MJW16010

Order this documentMOTOROLAby MJW16010A/DSEMICONDUCTOR TECHNICAL DATAMJW16010A*Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1 kV SWITCHMODE Series15 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in125 AND 175 WATTSinductive circuits where fall time is critical. The

 ..2. Size:220K  inchange semiconductor
mjw16010.pdf pdf_icon

MJW16010

isc Silicon NPN Power Transistor MJW16010DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critica

 0.1. Size:219K  inchange semiconductor
mjw16010a.pdf pdf_icon

MJW16010

isc Silicon NPN Power Transistor MJW16010ADESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critic

 7.1. Size:220K  inchange semiconductor
mjw16018.pdf pdf_icon

MJW16010

isc Silicon NPN Power Transistor MJW16018DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FJN4302R | MBT3904DW1T3G

 

 
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