2N4349 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4349
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7 W
Tensión colector-base (Vcb): 65 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 175 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N4349
2N4349 Datasheet (PDF)
2n4338 2n4339 2n4340 2n4341.pdf
2N4338/4339/4340/4341Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)2N4338 -0.3 to -1 -50 0.6 0.62N4339 -0.6 to -1.8 -50 0.8 1.52N4340 -1 to -3 -50 1.3 3.62N4341 -2 to -6 -50 2 9FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: 2N4338
2n3442-2n4347.pdf
2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta
2n4338 2n4339 2n4340 2n4341.pdf
N-Channel JFETLow Noise AmplifierCORPORATION2N4338 2N4341FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2n4347.pdf
isc Silicon NPN Power Transistor 2N4347DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for application in industrial and commercialequipment including high fidelity audio amplifier,seriesand shunt regulators and
2n4348.pdf
isc Silicon NPN Power Transistor 2N4348DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Otros transistores... 2N4314 , 2N4315 , 2N432 , 2N433 , 2N434 , 2N4346 , 2N4347 , 2N4348 , 2SD669 , 2N4350 , 2N4354 , 2N4355 , 2N4356 , 2N4357 , 2N4358 , 2N4359 , 2N438 .
