MJW16212 Todos los transistores

 ..1. Size:291K  motorola
 mjw16212.pdf

Order this document MOTOROLA by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 (See MJE18002) MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor MJW16212* For High and Very High Resolution Monitors The MJW16212 is a state of the art SWITCHMODE bipolar power transistor. It *Motorola Preferred Devic

 8.1. Size:342K  motorola
 mjw16206.pdf

Order this document MOTOROLA by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors POWER TRANSISTORS For High and Very High Resolution CRT Monitors 12 AMPERES 1200 VOLTS VCES The MJF16206 and the MJW16206 are state of the art SWITCHMODE bipolar 50 and 150 WATTS power transistors. They are specifically designed for use i

 8.2. Size:119K  inchange semiconductor
 mjw16206.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJW16206 DESCRIPTION With TO-247 package High voltage ,high speed Low collector saturation voltage APPLICATIONS Designed for use in horizontal deflection circuits for high and every high resolution, monochrome and color CRT monitors PINNING PIN DESCRIPTION 1 Base Collector;connected to

 9.1. Size:362K  motorola
 mjw16010.pdf

Order this document MOTOROLA by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA MJW16010A * Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1 kV SWITCHMODE Series 15 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 125 AND 175 WATTS inductive circuits where fall time is critical. The

 9.2. Size:220K  inchange semiconductor
 mjw16010.pdf

isc Silicon NPN Power Transistor MJW16010 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critica

 9.3. Size:219K  inchange semiconductor
 mjw16010a.pdf

isc Silicon NPN Power Transistor MJW16010A DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critic

 9.4. Size:220K  inchange semiconductor
 mjw16018.pdf

isc Silicon NPN Power Transistor MJW16018 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin