2N4385 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4385
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO5
Búsqueda de reemplazo de 2N4385
2N4385 datasheet
2n4387.pdf
isc Silicon PNP Power Transistor 2N4387 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JA
2n4388.pdf
isc Silicon PNP Power Transistor 2N4388 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JA
Otros transistores... 2N4355 , 2N4356 , 2N4357 , 2N4358 , 2N4359 , 2N438 , 2N4383 , 2N4384 , C945 , 2N4386 , 2N4387 , 2N4388 , 2N4389 , 2N438A , 2N439 , 2N4390 , 2N4395 .
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