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2N4395 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4395

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 62 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO3

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2N4395 Datasheet (PDF)

5.1. 2n4393dcsm.pdf Size:49K _update-mosfet

2N4395
2N4395

2N4393DCSM SEME LAB SMALL SIGNAL DUAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) FEATURES 2 3 • HERMETIC CERAMIC SURFACE MOUNT 1 4 A PACKAGE 0.23 6 5 rad. (0.009) • CECC SC

5.2. 2n4393c1a 2n4393c1b 2n4393c1c 2n4393c1d.pdf Size:229K _update-mosfet

2N4395
2N4395

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 • Hermetic Surface Mounted Package. • Designed For High Reliability and Space Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage 40V VGS Gate – Source Voltage -40V VGD Gate – Drain Voltage -40V IG Gate Current 50mA PD TA = 25°C

 5.3. 2n4398 2n4399 2n5745.pdf Size:237K _motorola

2N4395
2N4395

Order this document MOTOROLA by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 (See 2N3442) PNP Silicon High-Power Transistors 2N4398 . . . designed for use in power amplifier and switching circuits. Low CollectorEmitter Saturation Voltage 2N4399 IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 2N5745 IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745 IIIIIIIIIIIIIIIIIIIIIII DC Curren

5.4. 2n4391 pn4391 sst4391 2n4392 pn4392 sst4392 2n4393 pn4393 sst4393.pdf Size:59K _vishay

2N4395
2N4395

2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 4 to 10 30 5 4 2N/PN/SST4392 2 to 5 60 5 4 2N/PN/SST4393 0.5 to 3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 4391<30 W D Low Error Voltage D Ana

 5.5. 2n4391 2n4392 2n4393.pdf Size:106K _central

2N4395
2N4395

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.6. 2n4398-99 2n5745.pdf Size:158K _mospec

2N4395
2N4395

A A A A

5.7. 2n4392.pdf Size:15K _semelab

2N4395
2N4395

2N4392 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) FAST SWITCHING dia. MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: SWITCHING APPLICATIONS TO18 METAL PACKAGE Underside View PIN 1 Source PIN 2 Drain PIN 3

5.8. 2n4391.pdf Size:13K _semelab

2N4395
2N4395

2N4391 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) FAST SWITCHING dia. MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: SWITCHING APPLICATIONS TO18 METAL PACKAGE Underside View PIN 1 Source PIN 2 Drain PIN 3

5.9. 2n4391 2n4392 2n4393 pn4391 pn4392 pn4393 sst4391 sst4392 sst4393.pdf Size:29K _calogic

2N4395
2N4395

N-Channel JFET Switch CORPORATION 2N4391 2N4393 / PN4391 PN4393 / SST4391 SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A r <300 Ohms (2N4391) ds(on) I <100pA Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V D(OFF) Switches 10VAC With 15V Supplies (4392, 4393) Gate Current . . . . . . . . . . . . . . . . . . . . . . .

5.10. 2n4398.pdf Size:38K _inchange_semiconductor

2N4395
2N4395

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Complement to Type 2N5301 APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector

5.11. 2n4398 2n4399 2n5745.pdf Size:121K _inchange_semiconductor

2N4395
2N4395

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N5301/5302/5303 Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified

5.12. 2n4399.pdf Size:38K _inchange_semiconductor

2N4395
2N4395

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Complement to Type 2N5302 APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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