2N439A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N439A
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 25
V
Tensión emisor-base (Veb): 25
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 18
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N439A
2N439A
Datasheet (PDF)
9.1. Size:237K motorola
2n4398 2n4399 2n5745.pdf 
Order this documentMOTOROLAby 2N4398/DSEMICONDUCTOR TECHNICAL DATA2N4347(See 2N3442)PNP Silicon High-PowerTransistors2N4398. . . designed for use in power amplifier and switching circuits. Low CollectorEmitter Saturation Voltage 2N4399IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,992N5745IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745
9.2. Size:59K vishay
2n4391 pn4391 sst4391 2n4392 pn4392 sst4392 2n4393 pn4393 sst4393.pdf
2N/PN/SST4391 SeriesVishay SiliconixN-Channel JFETs2N4391 PN4391 SST43912N4392 PN4392 SST43922N4393 PN4393 SST4393PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N/PN/SST4391 4 to 10 30 5 42N/PN/SST4392 2 to 5 60 5 42N/PN/SST4393 0.5 to 3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4391
9.3. Size:106K central
2n4391 2n4392 2n4393.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
9.5. Size:49K semelab
2n4393dcsm.pdf
2N4393DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)FEATURES2 3 HERMETIC CERAMIC SURFACE MOUNT1 4A PACKAGE 0.236 5rad.(0.009) CECC SC
9.6. Size:15K semelab
2n4392.pdf
2N4392MECHANICAL DATADimensions in mm (inches)JFET SWITCHING5.84 (0.230)5.31 (0.209)4.95 (0.195)N CHANNEL- DEPLETION4.52 (0.178)FEATURES LOW ON RESISTANCE0.48 (0.019)0.41 (0.016) FAST SWITCHINGdia. MILITARY OPTIONS AVAILABLE2.54 (0.100)Nom.3 12APPLICATIONS: SWITCHING APPLICATIONSTO18 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2
9.7. Size:13K semelab
2n4391.pdf
2N4391MECHANICAL DATADimensions in mm (inches)JFET SWITCHING5.84 (0.230)5.31 (0.209)4.95 (0.195)N CHANNEL- DEPLETION4.52 (0.178)FEATURES LOW ON RESISTANCE0.48 (0.019)0.41 (0.016) FAST SWITCHINGdia. MILITARY OPTIONS AVAILABLE2.54 (0.100)Nom.3 12APPLICATIONS: SWITCHING APPLICATIONSTO18 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2
9.8. Size:229K semelab
2n4393c1a 2n4393c1b 2n4393c1c 2n4393c1d.pdf
SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 Hermetic Surface Mounted Package. Designed For High Reliability and Space Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 40V VGS Gate Source Voltage -40V VGD Gate Drain Voltage -40V IG Gate Current 50mA PD TA = 25C
9.10. Size:38K inchange semiconductor
2n4399.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5302 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Coll
9.11. Size:181K inchange semiconductor
2n4395.pdf
isc Silicon NPN Power Transistor 2N4395DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
9.12. Size:38K inchange semiconductor
2n4398.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Coll
9.13. Size:182K inchange semiconductor
2n4396.pdf
isc Silicon NPN Power Transistor 2N4396DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
9.14. Size:121K inchange semiconductor
2n4398 2n4399 2n5745.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o
Otros transistores... 2N438A
, 2N439
, 2N4390
, 2N4395
, 2N4396
, 2N4397
, 2N4398
, 2N4399
, 2N3906
, 2N43A
, 2N44
, 2N440
, 2N4400
, 2N4401
, 2N4402
, 2N4403
, 2N4404
.
