MMBT2484LT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT2484LT1  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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MMBT2484LT1 datasheet

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MMBT2484LT1

MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH

 0.2. Size:211K  onsemi
mmbt2484lt1g.pdf pdf_icon

MMBT2484LT1

MMBT2484LT1G Low Noise Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc 2 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc 3 THERMAL C

 4.1. Size:187K  onsemi
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MMBT2484LT1

MMBT2484LT1G Low Noise Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc 2 Emitter-Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 100 mAdc THERMAL CH

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