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MMBT4248 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT4248

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO236

Búsqueda de reemplazo de transistor bipolar MMBT4248

 

MMBT4248 Datasheet (PDF)

5.1. mmbt4401m3.pdf Size:111K _upd

MMBT4248
MMBT4248

MMBT4401M3T5G NPN Switching Transistor The MMBT4401M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features • Reduces Board Space COLLECTO

5.2. mmbt489lt1g.pdf Size:117K _upd

MMBT4248
MMBT4248

MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in http://onsemi.com Portable Applications 30 VOLTS, 2.0 AMPERES Features NPN TRANSISTOR • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) 1 Rating Symbol Max Unit BASE Collector-Emitter Voltage VCEO 30 Vdc Collector-Ba

 5.3. mmbt4403lt1g.pdf Size:149K _upd

MMBT4248
MMBT4248

MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com http://onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit

5.4. mmbt4401-g.pdf Size:139K _upd

MMBT4248
MMBT4248

General Purpose Transistor MMBT4401-G (NPN) RoHS Device Features SOT-23 -Switching Transistor 0.118(3.00) 0.110(2.80) 3 0.055(1.40) Circuit Diagram 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) 1 0.035(0.90) Base 0.089(2.25) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimension

 5.5. mmbt4124lt1g.pdf Size:140K _upd

MMBT4248
MMBT4248

MMBT4124LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THER

5.6. mmbt4126lt1g.pdf Size:146K _upd

MMBT4248
MMBT4248

MMBT4126LT1G General Purpose Transistor PNP Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating: - Human Body Model: > 4000 V - Machine Model: > 400 V COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Ba

5.7. mmbt4403lt3g.pdf Size:149K _upd

MMBT4248
MMBT4248

MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique http://onsemi.com http://onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit

5.8. mmbt4403m3.pdf Size:126K _upd

MMBT4248
MMBT4248

MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features • Reduces Board Space COLLECTO

5.9. mmbt4400.pdf Size:62K _upd

MMBT4248
MMBT4248

2N4400 MMBT4400 C E C TO-92 B B E SOT-23 Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.

5.10. mmbt4401gh.pdf Size:109K _upd

MMBT4248
MMBT4248

Zowie Technology Corporation Switching Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT4401GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteri

5.11. mmbt4403-g.pdf Size:48K _upd

MMBT4248
MMBT4248

 GeneraI Purpose Transistors SMD Diodes SpeciaIist MMBT4403-G (PNP) RoHS Device SOT-23 Features 0.119(3.00) -Switching transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Marking: 2T 1 2 0.006(0.15) 0.083(2.10) 0.002(0.05) Collector 0.066(1.70) 3 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 1 0.006(0.15) max Base 0.020(0.50) 0.007(0.20) min 0.013(0.35) 2

5.12. mmbt4403gh.pdf Size:552K _upd

MMBT4248
MMBT4248

Zowie Technology Corporation Switching Transistor PNP Silicon Lead free product Halogen-free type 3 3 COLLECTOR 1 1 BASE MMBT4403GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 40 Vdc Collector-Base Voltage VCBO - 40 Vdc Emitter-Base Voltage VEBO - 5.0 Vdc Collector Current-Continuous IC - 600 mAdc THERMAL CHARACTERISTICS Ch

5.13. mmbt4401lt1g.pdf Size:152K _upd

MMBT4248
MMBT4248

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com http://onsemi.com Compliant COLLECTOR • AEC-Q101 Qualified and PPAP Capable 3 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

5.14. mmbt4403wt1g.pdf Size:144K _upd

MMBT4248
MMBT4248

MMBT4403WT1G Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 http://onsemi.com • ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc 3 Collector-Base Voltage

5.15. mmbt4401wt1g.pdf Size:161K _upd

MMBT4248
MMBT4248

MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 http://onsemi.com • ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

5.16. mmbt4403.pdf Size:301K _motorola

MMBT4248
MMBT4248

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4403LT1/D Switching Transistor MMBT4403LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 40 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 40 Vdc SOT23 (TO236AB) EmitterBase Voltage VEBO 5.0 Vdc Colle

5.17. mmbt404a.pdf Size:95K _motorola

MMBT4248
MMBT4248

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT404ALT1/D Chopper Transistor MMBT404ALT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 31808, STYLE 6 Rating Symbol Value Unit SOT23 (TO236AB) CollectorEmitter Voltage VCEO 35 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 25 Vdc Collecto

5.18. mmbt4401.pdf Size:301K _motorola

MMBT4248
MMBT4248

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4401LT1/D Switching Transistor MMBT4401LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CASE 31808, STYLE 6 SOT23 (TO236AB) CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collecto

5.19. mmbt4403k.pdf Size:166K _fairchild_semi

MMBT4248
MMBT4248

November 2006 MMBT4403K tm PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipa

5.20. 2n4401 mmbt4401.pdf Size:92K _fairchild_semi

MMBT4248
MMBT4248

2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V I

5.21. mmbt4401k.pdf Size:162K _fairchild_semi

MMBT4248
MMBT4248

November 2006 MMBT4401K tm NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 350 m

5.22. 2n4403 mmbt4403.pdf Size:69K _fairchild_semi

MMBT4248
MMBT4248

2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0 V I

5.23. mmbt4356.pdf Size:47K _fairchild_semi

MMBT4248
MMBT4248

MMBT4356 PNP General Purpose Amplifier 3 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from process 67. See TN4033A for characteristics. 2 SOT-23 1 Mark: 82 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Vol

5.24. mmbt4355 pn4355.pdf Size:463K _fairchild_semi

MMBT4248
MMBT4248

PN4355 MMBT4355 C E C TO-92 B SOT-23 B E Mark: 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Col

5.25. 2n4124 mmbt4124.pdf Size:95K _fairchild_semi

MMBT4248
MMBT4248

2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltag

5.26. 2n4126 mmbt4126.pdf Size:81K _fairchild_semi

MMBT4248
MMBT4248

2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Volt

5.27. mmbt4354.pdf Size:47K _fairchild_semi

MMBT4248
MMBT4248

MMBT4354 PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and 3 switch requiring collector currents to 500mA. Sourced from process 67. TN4033A for characteristics. 2 SOT-23 1 Mark: 79 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -6

5.28. 2n4400 mmbt4400.pdf Size:67K _fairchild_semi

MMBT4248
MMBT4248

2N4400 MMBT4400 C E C TO-92 B B E SOT-23 Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V

5.29. mmbt4124.pdf Size:73K _diodes

MMBT4248
MMBT4248

MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Type Available (MMBT4126) Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and S

5.30. mmbt4126.pdf Size:112K _diodes

MMBT4248
MMBT4248

MMBT4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Type Available (MMBT4124) C Dim Min Max Ideal for Low Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green" Device (Notes

5.31. mmbt4403.pdf Size:131K _diodes

MMBT4248
MMBT4248

MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features A Epitaxial Planar Die Construction SOT-23 Complementary NPN Type Available (MMBT4401) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green" Device (Note

5.32. mmbt4401.pdf Size:85K _diodes

MMBT4248
MMBT4248

MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Type Available (MMBT4403) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and S

5.33. mmbt4401t.pdf Size:176K _diodes

MMBT4248
MMBT4248

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22 TOP VIEW B C B 0.75 0.85 0.80 B E Mechanical Data C 1.45 1.75 1.60 G Case: SOT-523 D ? ? 0.50 H Case Materi

5.34. mmbt4403t.pdf Size:172K _diodes

MMBT4248
MMBT4248

MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Type Available (MMBT4401T) C Dim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22 B C TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 Mechanical Data G D ? ? 0

5.35. mmbt4403 sot-23.pdf Size:200K _mcc

MMBT4248
MMBT4248

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4403 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Operating and Storage Junction Temperatures: -55 to 150 Capable of 350mWatts of Power Dissipation PNP General Surface Mount SOT-23 Package Ic=-600mA Purpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suff

5.36. mmbt4401.pdf Size:184K _mcc

MMBT4248
MMBT4248

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4401 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Operating and Storage Junction Temperatures: -55 to 150 Purpose Amplifier IC=600mA Marking:2X/M4A Lead Free Finish/RoHS C

5.37. mmbt4401m3.pdf Size:125K _onsemi

MMBT4248
MMBT4248

MMBT4401M3T5G NPN Switching Transistor The MMBT4401M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features Reduces Board Space COLLECTOR

5.38. mmbt4401lt1.pdf Size:155K _onsemi

MMBT4248
MMBT4248

MMBT4401LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mA

5.39. mmbt4403lt1.pdf Size:151K _onsemi

MMBT4248
MMBT4248

MMBT4403LT1G Switching Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -60

5.40. mmbt489lt1-d.pdf Size:121K _onsemi

MMBT4248
MMBT4248

MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in http://onsemi.com Portable Applications 30 VOLTS, 2.0 AMPERES Features NPN TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) 1 Rating Symbol Max Unit BASE Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Vol

5.41. mmbt4403wt1.pdf Size:178K _onsemi

MMBT4248
MMBT4248

MMBT4403WT1G Switching Transistor PNP Silicon Features ? Moisture Sensitivity Level: 1 http://onsemi.com ? ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO --40 Vdc 3 Collector -- Base Voltage V

5.42. mmbt4126lt1.pdf Size:154K _onsemi

MMBT4248
MMBT4248

MMBT4126LT1G General Purpose Transistor PNP Silicon Features http://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V - Machine Model: > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Base Voltag

5.43. mmbt4124lt1.pdf Size:144K _onsemi

MMBT4248
MMBT4248

MMBT4124LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THERMAL C

5.44. mmbt4401wt1.pdf Size:180K _onsemi

MMBT4248
MMBT4248

MMBT4401WT1G Switching Transistor NPN Silicon Features ? Moisture Sensitivity Level: 1 http://onsemi.com ? ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR ? These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO 40 Vdc Collector -- Base Voltage VCBO 6

5.45. mmbt4403m3-d.pdf Size:125K _onsemi

MMBT4248
MMBT4248

MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com Features Reduces Board Space COLLECTOR

5.46. mmbt4403.pdf Size:190K _utc

MMBT4248
MMBT4248

UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose SOT-23 amplifier and switch requiring collector currents up to 500mA. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MMBT4403-A

5.47. mmbt4401.pdf Size:271K _utc

MMBT4248
MMBT4248

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 1 ? DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power SOT-23 amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236) 3 1 2 SOT-323 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMB

5.48. mmbt4401.pdf Size:270K _auk

MMBT4248
MMBT4248

MMBT4401 NPN Silicon Transistor Descriptions PIN Connection PIN Connection • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT4403 SOT-23 Ordering Information Type NO. Marking Package Code 4P ? MMBT4401 SOT-23 ? ? ?Dev

5.49. mmbt491.pdf Size:115K _secos

MMBT4248
MMBT4248

MMBT491 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low equivalent on-resistance SOT-23 Collector 3 MARKING: 491 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J J 0.085 0.177 K 3 K 0.450 0.

5.50. mmbt4403.pdf Size:422K _secos

MMBT4248
MMBT4248

MMBT4403 PNP Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 COLLECTOR A L 3 B 1.200 1.400 C 0.890 1.110 3 1 D 0.370 0.500 Top View S B BASE 1 2 G 1.780 2.040 3 H 0.013 0.100 V G 2 1 J 0.085 0.177 EMITTER 2 K 0.450 0.600 C L 0.890 1.020 H J D S 2.100 2.500

5.51. mmbt4401w.pdf Size:298K _secos

MMBT4248
MMBT4248

MMBT4401W NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L COLLECTOR Dim Min Max 3 A 1.800 2.200 S Top View B B 1.150 1.350 3 1 C 0.800 1.000 BASE V G D 0.300 0.400 1 G 1.200 1.400 2 2 C H 0.000 0.100 EMITTER H J 0.100 0.250 J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symbol V

5.52. mmbt4401.pdf Size:951K _secos

MMBT4248
MMBT4248

MMBT4401 NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A COLLECTOR SOT-23 L 3 Dim Min Max 3 3 A 2.800 3.040 S Top View 1 B 1 1 2 B 1.200 1.400 BASE 2 C 0.890 1.110 V G D 0.370 0.500 2 EMITTER G 1.780 2.040 C H 0.013 0.100 J 0.085 0.177 H J D K K 0.450 0.600 L 0.890 1.020 MAXIMUM

5.53. mmbt4403w.pdf Size:295K _secos

MMBT4248
MMBT4248

MMBT4403W PNP Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L Dim Min Max COLLECTOR A 1.800 2.200 3 S Top View B B 1.150 1.350 3 C 0.800 1.000 1 BASE D 0.300 0.400 V G 1 G 1.200 1.400 2 2 H 0.000 0.100 C EMITTER J 0.100 0.250 H J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symbol

5.54. mmbt493.pdf Size:512K _secos

MMBT4248
MMBT4248

MMBT493 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 3 Medium Power Transistor Top View C B 1 1 2 Collector 2 K E 3 MARKING D 493 1 H J F G Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. 2 A 2.80 3.00 G 0.10 REF. B 2.25 2.55 H

5.55. mmbt4403.pdf Size:375K _htsemi

MMBT4248
MMBT4248

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING :MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3

5.56. mmbt4401.pdf Size:1094K _htsemi

MMBT4248
MMBT4248

MMBT4401 TRANSISTOR(NPN) SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mA PC Collector Power dissipation 0.3

5.57. mmbt4403.pdf Size:334K _gsme

MMBT4248
MMBT4248

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4403 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -40 Vdc ???-????? Collector-Base Voltage VCBO -40 Vdc ???-???? Emitter-Base Voltage VEBO -5

5.58. mmbt4401.pdf Size:316K _gsme

MMBT4248
MMBT4248

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4401 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 40 Vdc ???-????? Collector-Base Voltage VCBO 60 Vdc ???-???? Emitter-Base Voltage VEBO 6.0

5.59. mmbt4403.pdf Size:222K _lge

MMBT4248
MMBT4248

MMBT4403 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0

5.60. mmbt4401.pdf Size:195K _lge

MMBT4248
MMBT4248

MMBT4401 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous I

5.61. mmbt4403.pdf Size:502K _wietron

MMBT4248
MMBT4248

MMBT4403 COLLECTOR 3 Switching Transistor PNP Silicon 3 1 1 BASE 2 SOT-23 2 EMITTER M aximum R atings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1)

5.62. mmbt4401.pdf Size:520K _wietron

MMBT4248
MMBT4248

MMBT4401 COLLECTOR 3 Switching Transistor NPN Silicon 3 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) mW 22

5.63. mmbt4401lt1.pdf Size:422K _willas

MMBT4248
MMBT4248

FM120-M WILLAS MMBT4401LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features ••Batch process design, excellent power dissipation offers We declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance. SOD

5.64. mmbt4403lt1.pdf Size:431K _willas

MMBT4248
MMBT4248

FM120-M WILLAS MMBT4403LT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to

5.65. mmbt4403wt1.pdf Size:503K _willas

MMBT4248
MMBT4248

FM120-M WILLAS THRU MMBT4403WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batc PNP etteh process design, excellent power dissipation offers Silicon b r reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to

5.66. mmbt4401wt1.pdf Size:528K _willas

MMBT4248
MMBT4248

FM120-M WILLAS THRU MMBT4401WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to • We declare th

5.67. mmbt4403.pdf Size:292K _can-sheng

MMBT4248
MMBT4248

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor MARKING MMBT4403=2T MARKING MMBT4403=2T MARKING :MMBT4403=2T MARKING MMBT4403=2T SOT-23 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise not

5.68. mmbt4401.pdf Size:285K _can-sheng

MMBT4248
MMBT4248

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor SOT-23 MARKING: MMBT4401=2X MARKING: MMBT4401=2X MARKING: MMBT4401=2X MARKING: MMBT4401=2X MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise no

5.69. mmbt4403.pdf Size:1020K _kexin

MMBT4248
MMBT4248

SMD Type Transistors PNP Transistors MMBT4403 (KMBT4403) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Ideal for Medium Power Amplification and Switching ● Complementary NPN Type Available (MMBT4401) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Coll

5.70. mmbt4401.pdf Size:1817K _kexin

MMBT4248
MMBT4248

SMD Type Transistors NPN Transistors MMBT4401 (KMBT4401) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Colle

5.71. mmbt4403w.pdf Size:1870K _kexin

MMBT4248
MMBT4248

SMD Type or SMD Type TransistICs PNP Transistors MMBT4403W (KMBT4403W) Features Switching transistors. ● Collector Current Capability IC=-600mA ● Collector Emitter Voltage VCEO=-40V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO -40 V Collector-base voltage VCBO -40 V Emitter-base voltage VEBO -5 V

Otros transistores... MMBT4124 , MMBT4125 , MMBT4126 , MMBT4140 , MMBT4141 , MMBT4142 , MMBT4143 , MMBT4146 , 2SC1815 , MMBT4249 , MMBT4250 , MMBT4250A , MMBT4258 , MMBT4258A , MMBT4274 , MMBT4275 , MMBT4354 .

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