MMBT8599 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT8599

Código: 2W

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT23

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MMBT8599 datasheet

 8.1. Size:814K  semtech
 mmbt8550c mmbt8550d.pdf pdf_icon

MMBT8599

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas

 8.2. Size:332K  topdiode
 mmbt8550.pdf pdf_icon

MMBT8599

Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com Tel/Fax +86 (0)769 82827329 Skype topdiode Email info@topdiode.com Website www.topdiode.com

 8.3. Size:131K  wej
 mmbt8550lt1.pdf pdf_icon

MMBT8599

RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current Ic=-500mA 2.EMITTER High Total Power Dissipation Pc=225mW 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage

 8.4. Size:449K  agertech
 mmbt8550c mmbt8550d.pdf pdf_icon

MMBT8599

MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V

MOSTRAR MÁS

Otros transistores... MMBT6427, MMBT6427LT1, MMBT6428, MMBT6429, MMBT6517, MMBT6520, MMBT6543, MMBT8598, C1815, MMBT918, MMBT918R, MMBT930, MMBT930R, MMBTA05, MMBTA05LT1, MMBTA06, MMBTA06LT1