MMBTA05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPSA05/MMBTA05NPN General Purpose Amplifier3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.2SOT-23TO-92 1Mark: 1H11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter V

MMBTA05 / MMBTA06NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type: MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant

M C CMMBTA05TMMicro Commercial ComponentsMicro Commercial Components THRU20736 Marilla Street ChatsworthCA 91311MMBTA06Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56)General Purpose Ideal

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD MMBTA05 Preliminary AMPLIFIER TRANSISTOR NPN MMBTA05 FEATURES * Collector-Emitter Voltage: VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA05L-AL3-R MMBTA05G-AL3-R SOT-323 B E C Tape ReelNote: Pin assignment: E: EMITTER, C: COLLECTOR, B: BASE MARKING www.unisonic.com.tw 1

MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor AL33FEATURES Top View C B1 Driver Transistor 1 22K EDMARKING H JF GCollectorC Millimeter MillimeterREF. REF.Min. Max. Min. Max.A 2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4

SEMICONDUCTOR MMBTA05TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER STAGE AMPLIFIER APPLICATIONS.VOLTAGE AMPLIFIER APPLICATIONS.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA55._+2.93 0.20AB 1.30+0.20/-0.15Driver Stage Application of 20 to 25 Watts Amplifiers.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0

MMBTA05TRANSISTOR(NPN)SOT-23 FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Juncti

MMBTA05/MMBTA06 NPN General Purpose TransistorSOT-23Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. ApplicationsDimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M

SMD Type TransistorsNPN TransistorsMMBTA05 (KMBTA05)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=60V1 2 Driver transistor+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable

RUMW UMW MMBTA05SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continu

MMBTA05 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Driver transistor 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

RoHS RoHSCOMPLIANT COMPLIANTMMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Moldi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA05LT1/DMMBTA05LT1Driver TransistorsMMBTA06LT1*NPN SiliconCOLLECTOR*Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol MMBTA05 MMBTA06 UnitCollectorEmitter Voltage VCEO 60 80 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 80 VdcEmit

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector

MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollec

MMBTA05MMBTA06Driver NPN312SOT-23MMBTA05 MMBTA06VCEO 608060 804.04.0MMBTA05=1H, MMBTA06=1GM(3)60MMBTA05MMBTA06 800MMBTA05 60MMBTA06800 4.0u0.1I =0)SB0.16MMBTA05u0.18MMBTA06_ _

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FORSWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASESOT-323 TERMINALSSOLDERABLE PER MIL-STD-202G, MET