MMBTA06LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBTA06LT1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar MMBTA06LT1

MMBTA06LT1 Datasheet (PDF)

..1. Size:103K onsemi
mmbta05lt1 mmbta06lt1.pdf

MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo

0.1. Size:114K onsemi
mmbta06lt1g.pdf

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

0.2. Size:106K first silicon
mmbta06lt1g.pdf

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current Continuous I

5.1. Size:114K onsemi
mmbta06lt3g.pdf