MMBTA43LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA43LT1
Código: M1E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: SOT23
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MMBTA43LT1 datasheet
mmbta42lt1 mmbta43lt1.pdf
MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 Characteristic Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 3 Collector-Base Voltage VCBO Vdc MMBTA42 300 MMBTA43 200 1 2 Emitter-B
mmbta42l smmbta42l mmbta43l.pdf
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mmbta42lt smmbta42l mmbta43l.pdf
MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Value
mmbta42l mmbta43.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA42LT1/D High Voltage Transistors * MMBTA42LT1 NPN Silicon COLLECTOR MMBTA43LT1 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol MMBTA42 MMBTA43 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 Emitter Base
Otros transistores... MMBTA14, MMBTA14LT1, MMBTA20, MMBTA20LT1, MMBTA28, MMBTA42, MMBTA42LT1, MMBTA43, TIP31C, MMBTA55, MMBTA55LT1, MMBTA56, MMBTA56LT1, MMBTA63, MMBTA63LT1, MMBTA64, MMBTA64LT1
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