MN24 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MN24
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 40 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.3 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar MN24

MN24 Datasheet (PDF)

0.1. Size:280K diodes
dmn24h3d5l.pdf

DMN24H3D5L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 3.5 @ VGS = 10V 0.48A Fast Switching Speed 240V 0.48A 3.5 @ VGS = 4.5V Small Surface Mount Package 6.0 @ VGS = 3.3V 0.37A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

0.2. Size:151K diodes
dmn2400uv.pdf

DMN2400UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Ma

0.3. Size:374K diodes
dmn2400ufb.pdf

DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 0.55 @ VGS = 4.5V 0.75A Fast Switching Speed 20V 0.75 @ VGS = 2.5V 0.63A Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protect

0.4. Size:380K diodes
dmn24h11ds.pdf

DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 11 @ VGS = 10V 0.27A 240V Small Surface Mount Package 12 @ VGS = 4.5V 0.26A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony

0.5. Size:456K diodes
dmn2400ufb4.pdf

DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X2-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound; Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage

0.6. Size:319K diodes
dmn2400ufd.pdf

DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Very low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.9A 0.6 @ VGS = 4.5V Fast Switching Speed 0.7A 0.8 @ VGS = 2.5V 20V ESD Protected Gate 0.5A 1.0 @ VGS = 1.8V Totally Lead-Free & F

0.7. Size:202K sanken-ele
mn2488.pdf