MN24 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MN24
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 40 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.3 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MN24
MN24 Datasheet (PDF)
dmn24h3d5l.pdf
DMN24H3D5L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 3.5 @ VGS = 10V 0.48A Fast Switching Speed 240V 0.48A 3.5 @ VGS = 4.5V Small Surface Mount Package 6.0 @ VGS = 3.3V 0.37A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
dmn2400uv.pdf
DMN2400UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Ma
dmn2400ufb.pdf
DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 0.55 @ VGS = 4.5V 0.75A Fast Switching Speed 20V 0.75 @ VGS = 2.5V 0.63A Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protect
dmn24h11ds.pdf
DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 11 @ VGS = 10V 0.27A 240V Small Surface Mount Package 12 @ VGS = 4.5V 0.26A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony
dmn2400ufb4.pdf
DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X2-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound; Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage
dmn2400ufd.pdf
DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Very low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.9A 0.6 @ VGS = 4.5V Fast Switching Speed 0.7A 0.8 @ VGS = 2.5V 20V ESD Protected Gate 0.5A 1.0 @ VGS = 1.8V Totally Lead-Free & F
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
