MN32 Todos los transistores

 

MN32 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MN32
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 30 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar MN32

 

MN32 Datasheet (PDF)

 0.1. Size:341K  diodes
dmn32d4sdw.pdf

MN32
MN32

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

 0.2. Size:274K  diodes
dmn32d2ldf.pdf

MN32
MN32

DMN32D2LDFCOMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Common Source Dual N-Channel MOSFET Case: SOT-353 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold

 0.3. Size:178K  diodes
dmn32d2lfb4.pdf

MN32
MN32

DMN32D2LFB4N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Con

 0.4. Size:146K  diodes
dmn3200u.pdf

MN32
MN32

DMN3200UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 90 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 110 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-

 0.5. Size:179K  diodes
dmn32d2lv.pdf

MN32
MN32

DMN32D2LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitan

 0.6. Size:128K  tysemi
dmn3200u.pdf

MN32

Product specificationDMN3200UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 90 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 110 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 200 m @ VGS = 1.5V

 0.7. Size:132K  m-mos
mmn3220.pdf

MN32
MN32

MMN3220Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@4.5V, Ids@5.0A = 32mRDS(ON), Vgs@2.5V, Ids@4.5A = 40mRDS(ON), Vgs@1.8V, Ids@4.0A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOT -23 Internal Schematic DiagramDrain Gate Source Top Vi

 0.8. Size:146K  m-mos
mmn3205.pdf

MN32
MN32

MMN3205Data SheetM-MOS Semiconductor Hong Kong Limited55V N-Channel Enhancement-Mode MOSFETVDS= 55VRDS(ON), Vgs@10V, Ids@62A = 8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityFully Characterized Avalanche Voltage and CurrentTO-220 Internal Schematic DiagramDrain Gate Source

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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