MN32 Todos los transistores

 0.1. Size:341K  diodes
 dmn32d4sdw.pdf

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

 0.2. Size:274K  diodes
 dmn32d2ldf.pdf

DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Common Source Dual N-Channel MOSFET Case SOT-353 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold

 0.3. Size:178K  diodes
 dmn32d2lfb4.pdf

DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case DFN1006H4-3 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal Con

 0.4. Size:146K  diodes
 dmn3200u.pdf

DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 90 m @ VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 110 m @ VGS = 2.5V Moisture Sensitivity Level 1 per J-

 0.5. Size:179K  diodes
 dmn32d2lv.pdf

DMN32D2LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitan

 0.6. Size:128K  tysemi
 dmn3200u.pdf

 0.7. Size:132K  m-mos
 mmn3220.pdf

MMN3220 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A = 32m RDS(ON), Vgs@2.5V, Ids@4.5A = 40m RDS(ON), Vgs@1.8V, Ids@4.0A = 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT -23 Internal Schematic Diagram Drain Gate Source Top Vi

 0.8. Size:146K  m-mos
 mmn3205.pdf

MMN3205 Data Sheet M-MOS Semiconductor Hong Kong Limited 55V N-Channel Enhancement-Mode MOSFET VDS= 55V RDS(ON), Vgs@10V, Ids@62A = 8m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Fully Characterized Avalanche Voltage and Current TO-220 Internal Schematic Diagram Drain Gate Source