2N4424 Todos los transistores

 

2N4424 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N4424
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2N4424

 

2N4424 Datasheet (PDF)

 ..1. Size:74K  central
2n4424.pdf

2N4424
2N4424

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..2. Size:94K  no
2n4424.pdf

2N4424
2N4424

 9.1. Size:353K  rca
2n442.pdf

2N4424

 9.2. Size:45K  philips
2n3866 2n4427.pdf

2N4424
2N4424

DISCRETE SEMICONDUCTORSDATA SHEET2N3866; 2N4427Silicon planar epitaxialoverlay transistors1995 Oct 27Product specificationSupersedes data of August 1986File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3866; 2N4427overlay transistorsDESCRIPTION APPLICATIONSNPN overlay transistors in TO-39 metal packages wi

 9.3. Size:132K  st
2n4427 bfr98.pdf

2N4424
2N4424

 9.4. Size:59K  central
2n4427.pdf

2N4424

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.5. Size:14K  advanced-semi
2n4429.pdf

2N4424

2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for A 45Class C Amplifier Applications Up to 1,000 MHz. B FEATURES: C D PG = 7.5 dB Typ. at 1.0 W/1000 MHz JE I Emitter Ballasting for Ruggedness F Omnigold Metallization System GH#8-32 UNCKMAXIMUM RATINGS MINIMUM MAXIMUMDIMin

 9.6. Size:28K  advanced-semi
2n4428.pdf

2N4424

2N4428NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2N4428 is a High FrequencyTransistor Designed for Amplifier andOscillator Applications.MAXIMUM RATINGS IC 425 mAVCE 30 VPDISS 3.5 W @ TC = 25 OC TJ -65 OC to +200 OCTSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE3 = COLLECTOR50 OC/WJCNONECHARACTERISTICS TC = 25 OCSYMBOL TE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1789 | 2SA290

 

 
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History: 2N1789 | 2SA290

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