2N4424 Todos los transistores

 ..1. Size:74K  central
 2n4424.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 ..2. Size:94K  no
 2n4424.pdf

 ..3. Size:1285K  sprague
 2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf

 9.1. Size:353K  rca
 2n442.pdf

 9.2. Size:45K  philips
 2n3866 2n4427.pdf

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages wi

 9.3. Size:132K  st
 2n4427 bfr98.pdf

 9.4. Size:59K  central
 2n4427.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.5. Size:14K  advanced-semi
 2n4429.pdf

2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for A 45 Class C Amplifier Applications Up to 1,000 MHz. B FEATURES C D PG = 7.5 dB Typ. at 1.0 W/1000 MHz J E I Emitter Ballasting for Ruggedness F Omnigold Metallization System G H #8-32 UNC K MAXIMUM RATINGS MINIMUM MAXIMUM DIM in

 9.6. Size:28K  advanced-semi
 2n4428.pdf

2N4428 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION The 2N4428 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 425 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 50 OC/W JC NONE CHARACTERISTICS TC = 25 OC SYMBOL TE