MP101A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MP101A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 10 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.5 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 10

Búsqueda de reemplazo de transistor bipolar MP101A

MP101A Datasheet (PDF)

9.1. Size:232K diodes
dmp1012ucb9.pdf

DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.

9.2. Size:457K diodes
dmp1011ucb9.pdf

DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.5

9.3. Size:326K diodes
dmp1018ucb9.pdf

DMP1018UCB9P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features LD-MOS technology with the lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 12m to Minimize On-State Losses -12V 12m 4.9nC 1.1nC -7.6AQg = 4.9nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential Typ. @ VGS = -4.5V, TA = +25C CSP with Footprint 1.5mm 1.5

9.4. Size:965K russia
mp101-a-b mp102 mp103-a mp111-a-b mp112 mp113-a.pdf