MP104 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MP104
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO66

Búsqueda de reemplazo de transistor bipolar MP104

MP104 Datasheet (PDF)

..1. Size:755K russia
mp104 mp105 mp106 mp114 mp115 mp116.pdf

0.1. Size:189K diodes
dmp1045ufy4.pdf

DMP1045UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed 32m@ VGS = -4.5V -5.5A Low Input/Output Leakage -12V 45m@ VGS = -2.5V -4.5A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 75m@ VGS = -1.8V -3.2A

0.2. Size:391K diodes
dmp1045u.pdf

DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 31m @ VGS = -4.5V 5.2A -12V Low Input/Output Leakage 45m @ VGS =-2.5V 4.3A ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Ha

0.3. Size:357K diodes
dmp1046ufdb.pdf

DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 61m @ VGS = -4.5V -3.8A P-Channel -12V 81m @ VGS = -2.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 115m @ VGS = -1.8V -2.8A Halogen and

0.4. Size:81K tysemi
dmp1045u.pdf

Product specification DMP1045UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) maxTA = 25C Fast Switching Speed Low Input/Output Leakage 31m@ VGS = -4.5V 5.2A Lead Free By Design/RoHS Compliant (Note 1) -12V 4.3A 45m@ VGS =-2.5V ESD Protected Up To

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

Recientemente añadidas las descripciónes de los transistores:

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