MP10A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP10A
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 30 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 15
Búsqueda de reemplazo de MP10A
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MP10A datasheet
0.1. Size:823K diodes
zxmp10a18k.pdf 
ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.150 @ VGS= -10V -5.9 -100 0.190 @ VGS= -6V -5.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on
0.2. Size:159K diodes
zxmp10a13fta.pdf
A Product Line of Diodes Incorporated ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast Switching Speed Max ID BVDSS Max RDS(ON) Package TA = +25 C Low Input Capacitance Note 5 Low Gate Charge Low Threshold 1.0 @ VGS= -10V -0.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -100V SOT23 Halogen and Antim
0.3. Size:277K diodes
zxmp10a18g.pdf
ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V RDS(on) = 0.150 ; ID = - 3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-r
0.4. Size:757K diodes
zxmp10a16k.pdf
ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.235 @ VGS= -10V 4.6 -100 0.285 @ VGS= -6V 4.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-
0.5. Size:473K diodes
zxmp10a13fq.pdf
ZXMP10A13FQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed Max ID BVDSS Max RDS(ON) Low Input Capacitance TA = +25 C Low Gate Charge 1.0 @ VGS= -10V -0.7A Low Threshold -100V 1.45 @ VGS= -6.0V -0.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
0.6. Size:210K diodes
zxmp10a13f.pdf
ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-resista
0.7. Size:699K diodes
zxmp10a17e6 zxmp10a17e6ta.pdf
A Product Line of Diodes Incorporated ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1
0.8. Size:636K diodes
zxmp10a17g.pdf
A Product Line of Diodes Incorporated ZXMP10A17G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10
0.9. Size:608K diodes
zxmp10a18gta.pdf
A Product Line of Diodes Incorporated ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID max Fast switching speed V(BR)DSS RDS(on) max TA = 25 C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability
0.10. Size:639K diodes
zxmp10a17e6q.pdf
ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25 C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)
0.11. Size:678K diodes
zxmp10a17k.pdf
A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -3.9A Qualified to AEC-Q101 Standards for High Reliability -1
0.12. Size:600K diodes
zxmp10a17e6.pdf
ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25 C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q
0.13. Size:820K zetex
zxmp10a18ktc.pdf
ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.150 @ VGS= -10V -5.9 -100 0.190 @ VGS= -6V -5.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on
0.14. Size:753K zetex
zxmp10a16ktc.pdf
ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.235 @ VGS= -10V 4.6 -100 0.285 @ VGS= -6V 4.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-
0.15. Size:904K cn vbsemi
zxmp10a18k.pdf
ZXMP10A18K www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Swit
0.16. Size:762K cn vbsemi
zxmp10a17gta.pdf
ZXMP10A17GTA www.VBsemi.tw P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Applicatio
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