MP15 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMP1555UFA 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID MAX V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 0.8 @ VGS = -4.5V Low On-Resistance 1.1 @ VGS = -2.5V Low Input Capacitance -12V -0.2A 3.0 @ VGS = -1.8V ESD Protecte

VCEO = -260 V, IC = -15 A Silicon PNP Epitaxial Planar Transistor MP1526 Data Sheet Description Package The MP1526 is a PNP transistor of -260 V, -15 A. TO3P-3L The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. (4) Features Complementary to MN1526 LAPT (Linear Amplifier Power Transistor) High Transition F

N RN-CHANNEL MOSFET MP15N60EI Package MAIN CHARACTERISTICS ID 15A VDSS 600V Rdson-max 0.48 Vgs=10V Qg-Typ 53.73nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

TMP15N50/TMPF15N50TMP15N50G/TMPF15N50GVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHSTMP15N50G / TMPF15N50G

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65FN15N65F2, N65F2, WM F2 650V Super Ju MOSFETV 0.29 S unction Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sD S D G GG S D G SJ-MOSFE while of an extr

WML1 MM15N65C15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFETV 0.32 Super JunctionDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C2

WML1 MM15N70C15N70C4, WMK15N70C4, WM C4 WMN15N70C4, WMP15N70C4, WM C4 MO15N70C 700V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MP1526DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -260V(Min)(BR)CEOComplement to Type MN1526APPLICATIONSPower amplifier applicationsRecommend for 150W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATI