MP15 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MP15

Material: Ge

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 30

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MP15 datasheet

 0.1. Size:361K  diodes
dmp1555ufa.pdf pdf_icon

MP15

DMP1555UFA 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID MAX V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 0.8 @ VGS = -4.5V Low On-Resistance 1.1 @ VGS = -2.5V Low Input Capacitance -12V -0.2A 3.0 @ VGS = -1.8V ESD Protecte

 0.2. Size:458K  sanken-ele
mp1526.pdf pdf_icon

MP15

VCEO = -260 V, IC = -15 A Silicon PNP Epitaxial Planar Transistor MP1526 Data Sheet Description Package The MP1526 is a PNP transistor of -260 V, -15 A. TO3P-3L The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. (4) Features Complementary to MN1526 LAPT (Linear Amplifier Power Transistor) High Transition F

 0.3. Size:924K  russia
mp13 mp13b mp14a mp14b mp14i mp15a mp15b.pdf pdf_icon

MP15

 0.4. Size:1290K  jilin sino
mp15n60eif mp15n60eib mp15n60eis mp15n60eic.pdf pdf_icon

MP15

N R N-CHANNEL MOSFET MP15N60EI Package MAIN CHARACTERISTICS ID 15A VDSS 600V Rdson-max 0.48 Vgs=10V Qg-Typ 53.73nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

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