MP15 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP15
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hFE): 30
Búsqueda de reemplazo de MP15
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MP15 datasheet
0.1. Size:361K diodes
dmp1555ufa.pdf 

DMP1555UFA 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID MAX V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 0.8 @ VGS = -4.5V Low On-Resistance 1.1 @ VGS = -2.5V Low Input Capacitance -12V -0.2A 3.0 @ VGS = -1.8V ESD Protecte
0.2. Size:458K sanken-ele
mp1526.pdf 

VCEO = -260 V, IC = -15 A Silicon PNP Epitaxial Planar Transistor MP1526 Data Sheet Description Package The MP1526 is a PNP transistor of -260 V, -15 A. TO3P-3L The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. (4) Features Complementary to MN1526 LAPT (Linear Amplifier Power Transistor) High Transition F
0.4. Size:1290K jilin sino
mp15n60eif mp15n60eib mp15n60eis mp15n60eic.pdf 

N R N-CHANNEL MOSFET MP15N60EI Package MAIN CHARACTERISTICS ID 15A VDSS 600V Rdson-max 0.48 Vgs=10V Qg-Typ 53.73nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.5. Size:343K trinnotech
tmp15n50 tmpf15n50.pdf 

TMP15N50/TMPF15N50 TMP15N50G/TMPF15N50G VDSS = 550 V @Tjmax Features ID = 14A Low gate charge RDS(on) = 0.44 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHS TMP15N50G / TMPF15N50G
0.6. Size:666K way-on
wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdf 

WML1 MM15N60C 15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
0.7. Size:669K way-on
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf 

WML1 MM15N65C 15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
0.8. Size:668K way-on
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf 

WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65F N15N65F2, N65F2, WM F2 650V Super Ju MOSFET V 0.29 S unction Power M T Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s D S D G G G S D G SJ-MOSFE while of an extr
0.9. Size:655K way-on
wml15n65c2 wmk15n65c2 wmm15n65c2 wmn15n65c2 wmp15n65c2 wmo15n65c2.pdf 

WML1 MM15N65C 15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFET V 0.32 Super Junction Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C2
0.10. Size:669K way-on
wml15n70c4 wmk15n70c4 wmm15n70c4 wmn15n70c4 wmp15n70c4 wmo15n70c4.pdf 

WML1 MM15N70C 15N70C4, WMK15N70C4, WM C4 WMN15N70C4, WMP15N70C4, WM C4 MO15N70C 700V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
0.11. Size:591K cn minos
mp150n08p.pdf 

80V N-Channel Power MOSFET DESCRIPTION The MP150N08 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used ina wide variety of applications. KEY CHARACTERISTICS Schematic diagram VDS = 80V,ID = 150A RDS(ON)
0.12. Size:257K cn sptech
mp1526r mp1526o mp1526p.pdf 

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MP1526 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -260V(Min) (BR)CEO Complement to Type MN1526 APPLICATIONS Power amplifier applications Recommend for 150W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATI
Otros transistores... MP116, MP11A, MP13, MP13B, MP14, MP14A, MP14B, MP14I, 431, MP1529, MP1529A, MP1530, MP1530A, MP1531, MP1531A, MP1532, MP1532A