MP4048 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MP4048
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 170 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 25 V
   Corriente del colector DC máxima (Ic): 60 A
   Temperatura operativa máxima (Tj): 110 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.12 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO36

Búsqueda de reemplazo de transistor bipolar MP4048

MP4048 Datasheet (PDF)

9.1. Size:281K diodes
dmp4047ssd.pdf

DMP4047SSD40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = +25C Fast switching speed 45m @ VGS = -10V -6.5A -40V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 55m @ VGS = -4.5V -5.9A Halogen and Antimony Free. Gre

9.2. Size:236K diodes
dmp4047lfde.pdf

DMP4047LFDE40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max Package PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 33m @ VGS = -10V -6A U-DFN2020-6 Low On-Resistance -40V Type E 50m @ VGS = -4.5V -4.9A Totally Lead-Free & Fully RoHS Com

9.3. Size:624K diodes
dmp4047sk3.pdf

DMP4047SK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 45m @ VGS = -10V -20A -40V Halogen and Antimony Free. Green Device (Note 3) 55m @ VG

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: U2T833

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050