MP4050 Todos los transistores

 

MP4050 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MP4050
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 170 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 40 V
   Corriente del colector DC máxima (Ic): 50 A
   Temperatura operativa máxima (Tj): 110 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.12 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO36
 

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MP4050 Datasheet (PDF)

 0.1. Size:701K  diodes
dmp4050ssd.pdf pdf_icon

MP4050

A Product Line ofDiodes IncorporatedDMP4050SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Lead-Free, RoHS Compliant (Note 1) (Notes 4 & 6) Halogen and Antimony Free, Green Device (Note 1) 50m @ VGS = -10V -5.2A Qualified to

 0.2. Size:671K  diodes
dmp4050sss.pdf pdf_icon

MP4050

A Product Line ofDiodes IncorporatedDMP4050SSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 50m @ VGS= -10V -6.0A Qualified to AEC-Q101 Standards for High Reliability -40V 79m @ VGS= -4.5V -4.7A Me

 9.1. Size:668K  diodes
dmp4051lk3.pdf pdf_icon

MP4050

A Product Line ofDiodes IncorporatedGreenDMP4051LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 51m @ VGS= -10V -10.5A Qualified to AEC-Q101 Standards for High Reliability -40V 85m @ VGS= -4.5V -8.4

 9.2. Size:266K  inchange semiconductor
dmp4051lk3.pdf pdf_icon

MP4050

isc P-Channel MOSFET Transistor DMP4051LK3FEATURESDrain Current I = -10.5A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 51m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: JE9011I | GES3053 | 2SC5807 | PBRN113ES | 2SC1679 | NS9731 | 2SB1135R

 

 
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