MP4052 Todos los transistores

 

MP4052 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MP4052
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 170 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 30 V
   Corriente del colector DC máxima (Ic): 50 A
   Temperatura operativa máxima (Tj): 110 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.24 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO36
 

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MP4052 Datasheet (PDF)

 9.1. Size:668K  diodes
dmp4051lk3.pdf pdf_icon

MP4052

A Product Line ofDiodes IncorporatedGreenDMP4051LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 51m @ VGS= -10V -10.5A Qualified to AEC-Q101 Standards for High Reliability -40V 85m @ VGS= -4.5V -8.4

 9.2. Size:701K  diodes
dmp4050ssd.pdf pdf_icon

MP4052

A Product Line ofDiodes IncorporatedDMP4050SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Lead-Free, RoHS Compliant (Note 1) (Notes 4 & 6) Halogen and Antimony Free, Green Device (Note 1) 50m @ VGS = -10V -5.2A Qualified to

 9.3. Size:671K  diodes
dmp4050sss.pdf pdf_icon

MP4052

A Product Line ofDiodes IncorporatedDMP4050SSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 50m @ VGS= -10V -6.0A Qualified to AEC-Q101 Standards for High Reliability -40V 79m @ VGS= -4.5V -4.7A Me

 9.4. Size:266K  inchange semiconductor
dmp4051lk3.pdf pdf_icon

MP4052

isc P-Channel MOSFET Transistor DMP4051LK3FEATURESDrain Current I = -10.5A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 51m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: PDTA123TU | BFX51 | HD122 | 40327V1 | BC847BP | 2SC6114T1GP | 2SA856A

 

 
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