MPS5172 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172TO-92Plastic PackageCBEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 25 VVEBOEmitter Base Voltage 5 VICCollector Current

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS5179/DHigh Frequency TransistorNPN SiliconMPS5179Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 12 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 20 VdcEmitterBase Voltage VEBO 2.5 Vdc

MPS5179 MMBT5179 PN5179CEC TO-92 C TO-92B B ESOT-23E BMark: 3CNPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifierswith collector currents in the 100 A to 30 mA range in commonemitter or common base mode of operation, and in low frequencydrift, high ouput UHF oscillators. Sourced from Process 40.Absolute Maximum Ratings* TA = 25C unless o

NPN SILICON PLANARMPS5179HIGH FREQUENCY TRANSISTORI T I I T IT I I TI D T T T ID D I T T TI I I E-Line T T TO92 Compatible I T T I T I ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i i T T T i I iI I ed, applieds orpply ofMPS5179ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless ot

MPS5179Preferred DeviceHigh Frequency TransistorNPN SiliconFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 12 Vdc2BASECollector -Base Voltage VCBO 20 VdcEmitter -Base Voltage VEBO 2.5 Vdc1Collector Current - Continuous IC 50 mAdcEMITTERTotal Device Dissipation @ TA