MPS6535M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS6535M
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 135 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar MPS6535M
MPS6535M Datasheet (PDF)
mps6530r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6530/DAmplifier TransistorMPS6530NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuo
mps6531.pdf
Discrete POWER & SignalTechnologiesMPS6531C TO-92BENPN General Purpose AmplifierThis device is designed for use as a medium power amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 19. See PN2222A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV C
mps6534.pdf
Discrete POWER & SignalTechnologiesMPS6534C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V
mps6530 31.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530MPS6531TO-92Plastic PackageCBEAMPLIFIER TRANSISTORABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Conti
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050