MPS6717 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS6717
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO92
Búsqueda de reemplazo de MPS6717
- Selecciónⓘ de transistores por parámetros
MPS6717 datasheet
mps6717rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS6717/D One Watt Amplifier Transistor NPN Silicon MPS6717 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Collector Emitter Voltage VCEO 80 Vdc CASE 29 05, STYLE 1 Collector Base Voltage VCBO 80 Vdc TO 92 (TO 226AE) Emitter Base Voltage VEBO 5.0 Vdc Collector Current
mps6717-d.pdf
MPS6717 One Watt Amplifier Transistor NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc 1 Collector -Base Voltage VCBO 80 Vdc EMITTER Emitter -Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25 C PD 1.
Otros transistores... MPS6595, MPS6601, MPS6602, MPS6651, MPS6652, MPS6714, MPS6715, MPS6716, BDT88, MPS6724, MPS6725, MPS6726, MPS6727, MPS6728, MPS6729, MPS6733, MPS6734
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irf9530 datasheet | mj21194 | oc71 transistor | 2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor



