MPS750 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS750
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar MPS750
MPS750 Datasheet (PDF)
mps650 mps651 mps750 mps751.pdf
NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60
mps750.pdf
MPS750 -2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Amplification. Collector 1Emitter 1113 2Base 2223Collector 3332 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 1 B
mps650 51 mps750 51.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN)MPS750 , MPS751 (PNP)TO -92CBEAMPLIFIER TRANSISTORSABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL MPS650 MPS651 UNITSMPS750 MPS751Collector -Emitter Voltage VCEO 40 60 VCollector -Base Voltage VCBO 60 80 VEmitter -Base Vo
mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf
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mps751.pdf
MPS751Silicon PNP Transistor (Note 1) Low Saturation VoltageTO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current (DC) 2 APC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature - 55 ~ 150 C
mps751rlrag.pdf
NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
mps751.pdf
MPS751Silicon PNP Transistor (Note 1) Low Saturation VoltageTO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current (DC) 2 APC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature - 55 ~ 150 C
mps751rlrpg.pdf
NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
mps751g.pdf
NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
mps751zl1g.pdf
NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
mps751.pdf
SEMICONDUCTOR MPS751TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS651.D 0.45E 1.00F 1.27
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC2811 | ZTX214BK | RCP137
History: 2SC2811 | ZTX214BK | RCP137
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050