MPS750 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPS750

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 75 MHz

Ganancia de corriente contínua (hFE): 75

Encapsulados: TO92

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MPS750 datasheet

 ..1. Size:68K  onsemi
mps650 mps651 mps750 mps751.pdf pdf_icon

MPS750

NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60

 ..2. Size:61K  secos
mps750.pdf pdf_icon

MPS750

MPS750 -2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Amplification. Collector 1Emitter 1 1 1 3 2Base 2 2 2 3Collector 3 3 3 2 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 1 B

 ..3. Size:191K  cdil
mps650 51 mps750 51.pdf pdf_icon

MPS750

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN) MPS750 , MPS751 (PNP) TO -92 CBE AMPLIFIER TRANSISTORS ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL MPS650 MPS651 UNITS MPS750 MPS751 Collector -Emitter Voltage VCEO 40 60 V Collector -Base Voltage VCBO 60 80 V Emitter -Base Vo

 0.1. Size:57K  central
mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf pdf_icon

MPS750

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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