MPS753 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPS751Silicon PNP Transistor (Note 1) Low Saturation VoltageTO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current (DC) 2 APC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature - 55 ~ 150 C

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NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

MPS751Silicon PNP Transistor (Note 1) Low Saturation VoltageTO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current (DC) 2 APC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature - 55 ~ 150 C

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

MPS750 -2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Amplification. Collector 1Emitter 1113 2Base 2223Collector 3332 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 1 B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN)MPS750 , MPS751 (PNP)TO -92CBEAMPLIFIER TRANSISTORSABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL MPS650 MPS651 UNITSMPS750 MPS751Collector -Emitter Voltage VCEO 40 60 VCollector -Base Voltage VCBO 60 80 VEmitter -Base Vo

SEMICONDUCTOR MPS751TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS651.D 0.45E 1.00F 1.27