MPS8599 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NPN - MPS8099; PNP -MPS8599Preferred Device Amplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 80 Vdc1 1Collector-Base Voltage VCBO 80 VdcEMITTER EMITTEREmitter-Base

DIP Type TransistorsPNP TransistorsMPS8599 (KPS8599)TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

September 2007MPS8598PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS8598MPS8599TO-92Plastic PackageCBEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL MPS8598 MPS8599 UNITSVCEOCollector Emitter Voltage 60 80 VVCBOCollector Base Voltage 60 80 VVEBOEmitter Base Voltage 5

SEMICONDUCTOR MPS8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. EFEATUREL B LComplementary to MPS8050S. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55P PM 0.20 M

SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunctio

SEMICONDUCTOR MPS8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -25 VCollector-Emitter Voltage _HJ 14.0