MPS8599 Todos los transistores

NPN - MPS8099; PNP - MPS8599 Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors http //onsemi.com Features NPN PNP Pb-Free Packages are Available* COLLECTOR COLLECTOR 3 3 MAXIMUM RATINGS 2 2 BASE BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc 1 1 Collector-Base Voltage VCBO 80 Vdc EMITTER EMITTER Emitter-Base

DIP Type Transistors PNP Transistors MPS8599 (KPS8599) TO-92 Unit mm +0.25 4.58 0.15 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 0.05 1 2 3 [1.27 0.20] [1.27 0.20] 3.60 0.20 1. Emitter 2. Base (R2.29) 3. Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni

September 2007 MPS8598 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter V

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS8598 MPS8599 TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL MPS8598 MPS8599 UNITS VCEO Collector Emitter Voltage 60 80 V VCBO Collector Base Voltage 60 80 V VEBO Emitter Base Voltage 5

SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E FEATURE L B L Complementary to MPS8050S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 P P M 0.20 M

SEMICONDUCTOR MPS8550SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8050SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -1,200 mA PC * Collector Power Dissipation 350 mW Tj Junctio

SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.0