MPS918R Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS918R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 600 MHz
Capacitancia de salida (Cc): 1.7 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO92
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MPS918R datasheet
mps918re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MPS918/D Amplifier Transistors MPS918* NPN Silicon MPS3563 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPS918 MPS3563 Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 15 12 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 30 Vdc Emitter Base Vol
mps918 mps3563.pdf
MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector -Emitter Voltage VCEO Vdc MPS918 15 1 MPS3563 12 EMITTER Collector -Base Voltage VCBO Vdc MPS918 30 MPS3563 30 MARKING DIAGRAM Emitter -Base Voltage VEBO Vdc MPS9
mps911 mmbr911lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR911LT1/D The RF Line MMBR911LT1 NPN Silicon MPS911 High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers and low noise VCO s. Available in a surface mountable plastic package, as well as IC = 60 mA the popular TO 226AA (TO 92) package. This Motorola series of small sig
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