MPSH85 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSH85
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 350 MHz
Capacitancia de salida (Cc): 0.2 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO92
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MPSH85 Datasheet (PDF)
mpsh81 mmbth81.pdf

MPSH81 MMBTH81CEC TO-92BESOT-23BMark: 3DPNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 75.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage
mmbth81 mpsh81.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA815 | 2SA1706T-AN | BC848CW-G | 2N2916DCSM | RT3YB7M | 3DG2413K
History: 2SA815 | 2SA1706T-AN | BC848CW-G | 2N2916DCSM | RT3YB7M | 3DG2413K



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