MPSW06 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSW06
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar MPSW06

MPSW06 Datasheet (PDF)

..1. Size:138K motorola
mpsw05 mpsw06.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW05/DOne Watt Amplifier TransistorsMPSW05NPN Silicon*MPSW06*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSW05 MPSW06 UnitCASE 2905, STYLE 1CollectorEmitter Voltage VCEO 60 80 VdcTO92 (TO226AE)CollectorBase Voltage VCBO 60 80 VdcEmitte

..2. Size:23K fairchild semi
mpsw06.pdf

Discrete POWER & SignalTechnologiesMPSW06TO-226CBENPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 33. SeeMPSA06 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector

..3. Size:96K onsemi
mpsw05 mpsw06.pdf

MPSW05, MPSW06One Watt AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value Unit1EMITTERCollector-Emitter Voltage MPSW05 VCEO 60 VdcMPSW06 80Collector-Base Voltage MPSW05 VCBO 60 VdcMPSW06 80Emitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 500 mAdc TO

9.1. Size:89K motorola
mpsw01rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW01/DOne Watt High Current TransistorsMPSW01NPN Silicon*MPSW01ACOLLECTOR3*Motorola Preferred Device2BASE1EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO Vdc 3MPSW01 30MPSW01A 40CASE 2905, STYLE 1TO92 (TO226AE)CollectorBase Voltage VCBO Vdc

9.2. Size:138K fairchild semi
mpsw01.pdf

MPSW01NPN General Purpose AmplifierFeatures This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 1.0 APD Tota

9.3. Size:95K onsemi
mpsw01-a.pdf

MPSW01, MPSW01AOne Watt High CurrentTransistorsNPN SiliconFeatures http://onsemi.com Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW01 30EMITTERMPSW01A 40Collector-Base Voltage VCBO VdcMPSW01 40MPSW01A 50Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1000

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MPS6543 | BUX33B | 2N5036 | KT315N1 | 2N1381 | BUW26

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050