MRF216 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MRF216
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 170 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO128

Búsqueda de reemplazo de transistor bipolar MRF216

MRF216 Datasheet (PDF)

9.1. Size:406K freescale
mrf21010.pdf

Document Number: MRF21010Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsMRF21010LR1N--Channel Enhancement--Mode Lateral MOSFETsMRF21010LSR1Designed for W--CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierapplications. To be used in Class AB for PCN--PCS/cellular ra

9.2. Size:473K freescale
mrf21045.pdf

Document Number: MRF21045Freescale SemiconductorRev. 12, 10/2008Technical DataRF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for W--CDMA base station applications with frequencies from 2110 MRF21045LR3to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-MRF21045LSR3tions. To be used in Class AB for PCN -- PCS/cellular r

9.3. Size:423K freescale
mrf21030.pdf

Document Number: MRF21030Freescale SemiconductorRev. 12, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies fromMRF21030LR32000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierMRF21030LSR3applications. To be used in Class AB for PCN - PCS/cellula

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N5013S

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050