MRF315 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HG RF POWER TRANSISTORMRF315ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .380 4L STUDThe HG MRF315A is Designed for.112x45 AClass C Power Amplifier ApplicationsCup to 200 MHz.BE EFEATURES:C PG = 9.0 dB min. at 45 W/ 150 MHzB Withstands 30:1 Load VSWRIOmnigold Metalization System D HJMAXIMUM RATINGSG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3104/DThe RF LineMRF3104Microwave LinearMRF3105Power TransistorsMRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:MRF3104 MRF3105 MRF31068.012 dB GAINOutput Power0.5 W 0.8 W 1.6 W1.551.65 GHzPower Gain 10.5 dB 9 dB 8 dBMICROW

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF313/DThe RF LineNPN SiliconMRF313High-Frequency Transistor. . . designed for wideband amplifier, driver or oscillator applications in military,mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt1.0 W, 400 MHzPower Gain = 15 dB MinHIGHFREQUENCYEfficiency

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF313/DThe RF LineNPN SiliconMRF313High-Frequency Transistor. . . designed for wideband amplifier, driver or oscillator applications in military,mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt1.0 W, 400 MHzPower Gain = 15 dB MinHIGHFREQUENCYEfficiency

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3104/DThe RF LineMRF3104Microwave LinearMRF3105Power TransistorsMRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:MRF3104 MRF3105 MRF31068.012 dB GAINOutput Power0.5 W 0.8 W 1.6 W1.551.65 GHzPower Gain 10.5 dB 9 dB 8 dBMICROW

MRF314 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 30W, 30-200MHz, 28V Designed primarily for wideband largesignal driver and output Product Image amplifier stages in the 30200 MHz frequency range. Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB 100% tested for load mismatch at all ph

HG RF POWER TRANSISTORMRF314ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .380 4L FLGThe MRF314A is Designed for .112 x 45BAFEATURES: .125 NOM.FULL RJ.125 Omnigold Metalization System C D E MAXIMUM RATINGSFIHGIC 9.0 A MINIMUM MAXIMUMVCBO 65 VDIMinches / mm inches / mm.220 / 5