MRF317 Datasheet. Equivalente

 ..1. Size:117K  motorola
 mrf317.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF317/D The RF Line NPN Silicon MRF317 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W 100 W, 30 200 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Built

 0.1. Size:115K  motorola
 mrf317rev7.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF317/D The RF Line NPN Silicon MRF317 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W 100 W, 30 200 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Built

 0.2. Size:117K  motorola
 mrf317re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF317/D The RF Line NPN Silicon MRF317 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W 100 W, 30 200 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Built

 9.1. Size:133K  motorola
 mrf316rev7.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE

 9.2. Size:113K  motorola
 mrf314.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested

 9.3. Size:75K  motorola
 mrf3104r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF3104/D The RF Line MRF3104 Microwave Linear MRF3105 Power Transistors MRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics MRF3104 MRF3105 MRF3106 8.0 12 dB GAIN Output Power 0.5 W 0.8 W 1.6 W 1.55 1.65 GHz Power Gain 10.5 dB 9 dB 8 dB MICROW

 9.4. Size:123K  motorola
 mrf316.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE

 9.5. Size:123K  motorola
 mrf316re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE

 9.6. Size:113K  motorola
 mrf314re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested

 9.7. Size:63K  motorola
 mrf313re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF313/D The RF Line NPN Silicon MRF313 High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt 1.0 W, 400 MHz Power Gain = 15 dB Min HIGH FREQUENCY Efficiency

 9.8. Size:63K  motorola
 mrf313.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF313/D The RF Line NPN Silicon MRF313 High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt 1.0 W, 400 MHz Power Gain = 15 dB Min HIGH FREQUENCY Efficiency

 9.9. Size:75K  motorola
 mrf3104 mrf3105 mrf3106.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF3104/D The RF Line MRF3104 Microwave Linear MRF3105 Power Transistors MRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics MRF3104 MRF3105 MRF3106 8.0 12 dB GAIN Output Power 0.5 W 0.8 W 1.6 W 1.55 1.65 GHz Power Gain 10.5 dB 9 dB 8 dB MICROW

 9.10. Size:223K  macom
 mrf314.pdf

MRF314 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 30W, 30-200MHz, 28V Designed primarily for wideband large signal driver and output Product Image amplifier stages in the 30 200 MHz frequency range. Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB 100% tested for load mismatch at all ph

 9.11. Size:286K  hgsemi
 mrf315a.pdf

HG RF POWER TRANSISTOR MRF315A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The HG MRF315A is Designed for .112x45 A Class C Power Amplifier Applications C up to 200 MHz. B E E FEATURES C PG = 9.0 dB min. at 45 W/ 150 MHz B Withstands 30 1 Load VSWR I Omnigold Metalization System D H J MAXIMUM RATINGS G

 9.12. Size:243K  hgsemi
 mrf314a.pdf

HG RF POWER TRANSISTOR MRF314A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L FLG The MRF314A is Designed for .112 x 45 B A FEATURES .125 NOM. FULL R J .125 Omnigold Metalization System C D E MAXIMUM RATINGS F I H G IC 9.0 A MINIMUM MAXIMUM VCBO 65 V DIM inches / mm inches / mm .220 / 5