MRF427 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ELEFLOW TECHNOLOGIES MRF427/MRF427Awww.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description: MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 25 W (PEP), Minimum Gain = 18 dB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo

MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a highpower linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)

MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2

ELEFLOW TECHNOLOGIES MRF429www.eleflow.com NPN Silicon RF power transistor MRF429 Description: MRF429 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M