MRF428 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF428
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 320 W
Tensión colector-base (Vcb): 110 V
Tensión colector-emisor (Vce): 55 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Búsqueda de reemplazo de transistor bipolar MRF428
MRF428 Datasheet (PDF)
mrf421rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo
mrf422.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod
mrf426re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR
mrf426.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR
mrf421re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo
mrf422re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod
mrf429.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain
mrf429re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain
mrf421.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo
mrf422.pdf
MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a highpower linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)
mrf426.pdf
MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2
mrf427a.pdf
ELEFLOW TECHNOLOGIES MRF427/MRF427Awww.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description: MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 25 W (PEP), Minimum Gain = 18 dB
mrf429.pdf
ELEFLOW TECHNOLOGIES MRF429www.eleflow.com NPN Silicon RF power transistor MRF429 Description: MRF429 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: MQ1613
History: MQ1613
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050