MRF644 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF644/DThe RF LineNPN SiliconMRF644RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts25 W, 470 MHzMinimum Gain = 6.2 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF644/DThe RF LineNPN SiliconMRF644RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts25 W, 470 MHzMinimum Gain = 6.2 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414PHT/DThe RF LineMRF6414NPN SiliconPHOTOMASTERRF Power TransistorCASE 333A02, STYLE 2C9T2 +VCCR1C8P1C5D1C6C7D2C4R2RF OUTPUTRF INPUTC3T150 WC1C250 WC1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k, TrimmerC2, C7 330 pF, Chip Capacitor, 0805 R1 1 k, ResistorC5, C8

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF641/DThe RF LineNPN SiliconMRF641RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts15 W, 470 MHzMinimum Gain = 7.8 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401/DThe RF LineNPN SiliconMRF6401RF Power TransistorThe MRF6401 is designed for Class A common emitter, linear poweramplifiers in the 1.0 2.0 GHz frequency range. It has been specificallydesigned for use in Personal Communications Network (PCN) base station andINMARSAT Standard M applications. Specifie

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414PHT/DThe RF LineMRF6414NPN SiliconPHOTOMASTERRF Power TransistorCASE 333A02, STYLE 2C9T2 +VCCR1C8P1C5D1C6C7D2C4R2RF OUTPUTRF INPUTC3T150 WC1C250 WC1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k, TrimmerC2, C7 330 pF, Chip Capacitor, 0805 R1 1 k, ResistorC5, C8

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6408/DThe RF LineMRF6408NPN SiliconRF Power TransistorDesigned for PCN and PCS base station applications, the MRF6408incorporates high value emitter ballast resistors, gold metallizations and offers12 W, 2.0 GHza high degree of reliability and ruggedness.RF POWER TRANSISTOR To be used in class AB for PCN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414/DThe RF LineMRF6414NPN SiliconRF Power TransistorThe MRF6414 is designed for 26 volt UHF large signal, common emitter,class AB linear amplifier applications.50 W, 960 MHz Specified 26 Volt, 960 MHz Characteristics RF POWER TRANSISTOROutput Power = 50 Watts NPN SILICONMinimum Gain = 8.5 dB @ 960 MHz, C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6401PHT/DThe RF LineNPN SiliconMRF6401RF Power TransistorPHOTOMASTERCASE 305C02, STYLE 1SOE200PILLR4 R5 R6+VCCR7Q1R8R2 R3C9C10C4 C3 TL11TL10C5 C6 C7 C8TL6TL4C2TL5 TL7 TL9RFTL1 TL2OUTPUTRFTP1INPUTC1DUT TL8TL3 TL4C1 1.5 pF, ATC Chip Capacitor 100A Q1 Tran

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICONOutput Po

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6404/DThe RF LineMRF6404NPN SiliconMRF6404KRF Power TransistorThe MRF6404 is designed for 26 volts microwave large signal, commonemitter, class AB linear amplifier applications operating in the range 1.8 to30 W, 1.88 GHz2.0 GHz.RF POWER TRANSISTOR Specified 26 Volts, 1.88 GHz Characteristics NPN SILICON

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6402/DThe RF LineNPN SiliconMRF6402RF Power TransistorThe MRF6402 is designed for 1.8 GHz Personal Communications Network(PCN) base stations applications. It incorporates high value emitter ballastresistors, gold metallizations and offers a high degree of reliability andruggedness. For ease of design, this transi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF641/DThe RF LineNPN SiliconMRF641RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts15 W, 470 MHzMinimum Gain = 7.8 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6409/DThe RF LineNPN SiliconMRF6409RF Power TransistorThe MRF6409 is designed for GSM base stations applications. It incorpo-rates high value emitter ballast resistors, gold metallizations and offers a highdegree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteris