MRF9011LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC

Document Number: MRF9060Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9060LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9060LSR1devices make them ideal for large-signal, common-source amplif

Document Number: MRF9085Freescale SemiconductorRev. 11, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9085LR3Designed for broadband commercial and industrial applications withMRF9085LSR3frequencies from 865 to 895 MHz. The high gain and broadband performanceof these devices make them ideal for large-signal, common-source am

Document Number: MRF9080Freescale SemiconductorRev. 6, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9080LR3Designed for GSM 900 MHz frequency band, the high gain and broadbandMRF9080LSR3performance of these devices make them ideal for large - signal, common -source amplifier applications in 26 volt base station equipment.

Document Number: MRF9030Freescale SemiconductorRev. 8, 9/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9030LR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in

Document Number: MRF9045Freescale SemiconductorRev. 11, 9/2008Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9045LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9045LSR1devices make them ideal for large-signal, common-source ampli

Document Number: MRF9002NR2Freescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect Transistor ArrayN-Channel Enhancement-Mode Lateral MOSFETMRF9002NR2Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applica

Document Number: MRF9060NFreescale SemiconductorRev. 13, 6/2009Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9060NR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications