MRF9411BLT3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MRF9411BLT3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8000 MHz
   Capacitancia de salida (Cc): 0.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT143

Búsqueda de reemplazo de transistor bipolar MRF9411BLT3

MRF9411BLT3 Datasheet (PDF)

7.1. Size:386K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure

9.1. Size:166K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain

9.2. Size:166K motorola
mrf949t1.pdf