2N4907 Todos los transistores

 ..1. Size:11K  semelab
 2n4907.pdf

2N4907 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 40V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 ..2. Size:37K  inchange semiconductor
 2n4907.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB

 9.1. Size:63K  central
 2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.2. Size:124K  comset
 2n4901-2n4902-2n4903.pdf

PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2

 9.3. Size:171K  mospec
 2n4901-03 2n5067-69.pdf

A A A A

 9.4. Size:180K  mospec
 2n4898-99 2n4900.pdf

A A A A

 9.5. Size:11K  semelab
 2n4908.pdf

2N4908 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.6. Size:10K  semelab
 2n4901smd.pdf

2N4901SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 40V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 9.7. Size:11K  semelab
 2n4909.pdf

2N4909 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.8. Size:14K  semelab
 2n4900x.pdf

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.

 9.9. Size:43K  jmnic
 2n4901 2n4902 2n4903.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067,2N5068,2N5069 Low collector-emitter saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an

 9.10. Size:50K  jmnic
 2n4898 2n4899 2n4900.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi

 9.11. Size:37K  inchange semiconductor
 2n4908.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB

 9.12. Size:131K  inchange semiconductor
 2n4904 2n4905 2n4906.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION With TO-3 package Complement to type 2N4913/4914/4915 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

 9.13. Size:37K  inchange semiconductor
 2n4902.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 20-80 @IC= -1A Complement to Type 2N5068 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

 9.14. Size:37K  inchange semiconductor
 2n4909.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB

 9.15. Size:37K  inchange semiconductor
 2n4903.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 20-80 @IC= -1A Complement to Type 2N5069 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

 9.16. Size:36K  inchange semiconductor
 2n4906.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4915 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S

 9.17. Size:117K  inchange semiconductor
 2n4901 2n4902 2n4903.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067/5068/5069 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

 9.18. Size:37K  inchange semiconductor
 2n4904.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4913 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S

 9.19. Size:126K  inchange semiconductor
 2n4898 2n4899 2n4900.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi