MUN2216LT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN2216LT1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT23

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MUN2216LT1 datasheet

 0.1. Size:215K  onsemi
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MUN2216LT1

MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor

 5.1. Size:512K  lrc
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MUN2216LT1

LESHAN RADIO COMPANY, LTD. B as Res stor Trans stor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN2211LT1G Series S-LMUN2211LT1G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 3

Otros transistores... MUN2212LT1, MUN2212LT2, MUN2213LT1, MUN2213LT2, MUN2214LT1, MUN2214LT2, MUN2215LT1, MUN2215LT2, 2SC2625, MUN2216LT2, MUN2230LT1, MUN2230LT2, MUN2231LT1, MUN2231LT2, MUN2232LT1, MUN2232LT2, MUN2233LT1