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2N4912SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4912SM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de transistor bipolar 2N4912SM

 

2N4912SM Datasheet (PDF)

4.1. 2n4910x 2n4911x 2n4912x.pdf Size:15K _semelab

2N4912SM
2N4912SM

2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS • SCREENING OPTIONS AVAILABE 1 2 • TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO–66 Metal Package. PIN 1 =

4.2. 2n4912.pdf Size:53K _inchange_semiconductor

2N4912SM
2N4912SM

 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation ·Complement to Type 2N4900 APPLICATIONS ·Designed for driver circuits, switching and amplifier applications.

 5.1. 2n4918 2n4919 2n4920.pdf Size:254K _motorola

2N4912SM
2N4912SM

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and am

5.2. 2n4918 2n4919 2n4920 2.pdf Size:63K _central

2N4912SM

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

 5.3. 2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf Size:63K _central

2N4912SM

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.4. 2n4919g.pdf Size:117K _onsemi

2N4912SM
2N4912SM

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dis

 5.5. 2n4918g.pdf Size:117K _onsemi

2N4912SM
2N4912SM

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dis

5.6. 2n4918 2n4919 2n4920.pdf Size:113K _onsemi

2N4912SM
2N4912SM

ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high–performance plastic devices feature: 3 AMPERE • Low Saturation Voltage — GENERAL–PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40–80 VOLTS • Exc

5.7. 2n4911xsmd05.pdf Size:10K _semelab

2N4912SM

2N4911XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

5.8. 2n4910xsmd.pdf Size:10K _semelab

2N4912SM

2N4910XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

5.9. 2n4911xsmd.pdf Size:10K _semelab

2N4912SM

2N4911XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

5.10. 2n4910xsmd05.pdf Size:10K _semelab

2N4912SM

2N4910XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

5.11. 2n4918 2n4919 2n4920.pdf Size:41K _jmnic

2N4912SM
2N4912SM

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4921,2N4922 2N4923 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

5.12. 2n4915.pdf Size:36K _inchange_semiconductor

2N4912SM
2N4912SM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

5.13. 2n4913.pdf Size:36K _inchange_semiconductor

2N4912SM
2N4912SM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4904 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

5.14. 2n4910.pdf Size:53K _inchange_semiconductor

2N4912SM
2N4912SM

 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=

5.15. 2n4918 2n4919 2n4920.pdf Size:118K _inchange_semiconductor

2N4912SM
2N4912SM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4921/4922/4923 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

5.16. 2n4914.pdf Size:36K _inchange_semiconductor

2N4912SM
2N4912SM

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4905 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

5.17. 2n4911.pdf Size:53K _inchange_semiconductor

2N4912SM
2N4912SM

 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=

5.18. 2n4918.pdf Size:53K _inchange_semiconductor

2N4912SM
2N4912SM

 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Wide Area of Safe Operation ·Complement to Type 2N4921 APPLICATIONS ·Designed for driver circuits, switching and amplifier application

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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