2N4917 Datasheet. Equivalente

 9.1. Size:254K  motorola
 2n4918 2n4919 2n4920.pdf

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE Excellent

 9.2. Size:63K  central
 2n4918 2n4919 2n4920 2.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:63K  central
 2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.4. Size:113K  onsemi
 2n4918 2n4919 2n4920.pdf

ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high performance plastic devices feature 3 AMPERE Low Saturation Voltage GENERAL PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40 80 VOLTS Exc

 9.5. Size:263K  onsemi
 2n4918 2n4919 2n4920 2n4920g.pdf

2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C 3.0 A, 40-80 V, 30 W Excellent Safe Oper

 9.6. Size:117K  onsemi
 2n4919g.pdf

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis

 9.7. Size:117K  onsemi
 2n4918g.pdf

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis

 9.8. Size:10K  semelab
 2n4910xsmd05.pdf

2N4910XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

 9.9. Size:10K  semelab
 2n4911xsmd05.pdf

2N4911XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

 9.10. Size:15K  semelab
 2n4910x 2n4911x 2n4912x.pdf

2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS SCREENING OPTIONS AVAILABE 1 2 TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO 66 Metal Package. PIN 1 =

 9.11. Size:10K  semelab
 2n4910xsmd.pdf

2N4910XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

 9.12. Size:10K  semelab
 2n4911xsmd.pdf

2N4911XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

 9.13. Size:41K  jmnic
 2n4918 2n4919 2n4920.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

 9.14. Size:118K  inchange semiconductor
 2n4918 2n4919 2n4920.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

 9.15. Size:36K  inchange semiconductor
 2n4915.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- hFE= 25-100 @IC= 2.5A Complement to Type 2N4906 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

 9.16. Size:53K  inchange semiconductor
 2n4912.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation Complement to Type 2N4900 APPLICATIONS Designed for driver circuits, switching and amplifier applications.

 9.17. Size:53K  inchange semiconductor
 2n4918.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -40V(Min) Low Collector Saturatioin Voltage- VCE(sat)= -0.6V(Max.)@ IC= -1A Wide Area of Safe Operation Complement to Type 2N4921 APPLICATIONS Designed for driver circuits, switching and amplifier application

 9.18. Size:53K  inchange semiconductor
 2n4910.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=

 9.19. Size:36K  inchange semiconductor
 2n4914.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- hFE= 25-100 @IC= 2.5A Complement to Type 2N4905 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

 9.20. Size:36K  inchange semiconductor
 2n4913.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- hFE= 25-100 @IC= 2.5A Complement to Type 2N4904 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

 9.21. Size:53K  inchange semiconductor
 2n4911.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=