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2N4926S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4926S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO39-1

Búsqueda de reemplazo de transistor bipolar 2N4926S

 

2N4926S Datasheet (PDF)

5.1. 2n4921 2n4922 2n4923.pdf Size:238K _motorola

2N4926S
2N4926S

Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and am

5.2. 2n4918 2n4919 2n4920.pdf Size:254K _motorola

2N4926S
2N4926S

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and am

 5.3. 2n4918 2n4919 2n4920 2.pdf Size:63K _central

2N4926S

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.4. 2n4928 2n4929 2n4930 2n4931.pdf Size:58K _central

2N4926S
2N4926S

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

 5.5. 2n4921 2n4922 2n4923.pdf Size:90K _onsemi

2N4926S
2N4926S

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

5.6. 2n4921g.pdf Size:91K _onsemi

2N4926S
2N4926S

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

5.7. 2n4922g.pdf Size:91K _onsemi

2N4926S
2N4926S

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

5.8. 2n4918 2n4919 2n4920.pdf Size:113K _onsemi

2N4926S
2N4926S

ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high–performance plastic devices feature: 3 AMPERE • Low Saturation Voltage — GENERAL–PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40–80 VOLTS • Exc

5.9. 2n4920g9285.pdf Size:117K _onsemi

2N4926S
2N4926S

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dis

5.10. 2n4923g.pdf Size:91K _onsemi

2N4926S
2N4926S

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

5.11. 2n4928csm.pdf Size:16K _semelab

2N4926S
2N4926S

2N4928CSM GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm (inches) 0.51 ± 0.10 FEATURES (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PNP TRANSISTOR 3 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS 21 • SPACE QUALITY LEVELS OPTIONS

5.12. 2n4925.pdf Size:11K _semelab

2N4926S

2N4925 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 150V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

5.13. 2n4924.pdf Size:11K _semelab

2N4926S

2N4924 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

5.14. 2n4928dcsm.pdf Size:10K _semelab

2N4926S

2N4928DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 100V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.1A C (0.

5.15. 2n4923.pdf Size:194K _cdil

2N4926S
2N4926S

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Bas

5.16. 2n4921 2n4922 2n4923.pdf Size:41K _jmnic

2N4926S
2N4926S

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918,2N4919 2N4920 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

5.17. 2n4918 2n4919 2n4920.pdf Size:41K _jmnic

2N4926S
2N4926S

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4921,2N4922 2N4923 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

5.18. 2n4921 2n4922 2n4923.pdf Size:118K _inchange_semiconductor

2N4926S
2N4926S

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

5.19. 2n4918 2n4919 2n4920.pdf Size:118K _inchange_semiconductor

2N4926S
2N4926S

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4921/4922/4923 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

5.20. 2n4922.pdf Size:214K _inchange_semiconductor

2N4926S
2N4926S

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4922 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Low Collector Saturatioin Voltage- : V = 0.6V(Max.)@ I = 1A CE(sat) C ·Wide Area of Safe Operation ·Complement to Type 2N4919 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for d

Otros transistores... 2N4921 , 2N4922 , 2N4923 , 2N4924 , 2N4924S , 2N4925 , 2N4925S , 2N4926 , BC557 , 2N4927 , 2N4927S , 2N4928 , 2N4928S , 2N4929 , 2N4929S , 2N4930 , 2N4930S .

 

 
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