2N499 Todos los transistores

 

2N499 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N499

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.06 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 18 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hfe): 6

Empaquetado / Estuche: TO1

Búsqueda de reemplazo de transistor bipolar 2N499

 

2N499 Datasheet (PDF)

1.1. 2n4990.pdf Size:10K _planeta

2N499

2N4990 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width)

1.2. 2n4991.pdf Size:10K _planeta

2N499

2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300

 1.3. 2n4993.pdf Size:9K _planeta

2N499

2N4993 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300

1.4. 2n4992.pdf Size:9K _planeta

2N499

2N4992 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300 Electri

 1.5. 2n4999 2n5001.pdf Size:98K _ssdi

2N499
2N499



Otros transistores... 2N4975 , 2N4976 , 2N497A , 2N498 , 2N4980 , 2N4981 , 2N4982 , 2N498A , BD679 , 2N4994 , 2N4995 , 2N4996 , 2N4997 , 2N4998 , 2N4999 , 2N499A , 2N50 .

 

 
Back to Top

 


2N499
  2N499
  2N499
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: HTL194 | C3198 | AT41586 | TIP540 | SBT92 | SAP16N | RN2130FV | D71F2T1 | 2T951V | 2T951B | 2T951A | 104NU71 | 103NU71 | 102NU71 | 101NU71 | YZ21 | WT062 | TL142 | TIP3055T | TIP2955T |

 

 

 
Back to Top