2N501-18 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N501-18

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.06 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 40 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar 2N501-18

2N501-18 Datasheet (PDF)

5.1. 2n5011.pdf Size:11K _semelab

2N5011 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 600V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

5.2. 2n5012.pdf Size:11K _semelab

2N5012 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 700V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

5.3. 2n5015x.pdf Size:84K _semelab

2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305) 8.51 (0.335) NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) FEATURES min. 0.41 (0.016) 0.53 (0.021) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE 5.08 (0.20

5.4. 2n5015.pdf Size:11K _semelab

2N5015 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 1000V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)

5.5. 2n5014.pdf Size:15K _semelab

2N5014 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch- ing and linear applications in a hermetic TO–39 package.

5.6. 2n5013.pdf Size:11K _semelab

2N5013 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 800V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

5.7. 2n5018 2n5019.pdf Size:263K _linear-systems

2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω TO-18 ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures G 2 3 D Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C 1 S Maximum Powe

5.8. 2n5012s.pdf Size:55K _microsemi

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

5.9. 2n5010s.pdf Size:55K _microsemi