2N5030 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5030
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.32 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 1 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO92
- Selección de transistores por parámetros
2N5030 Datasheet (PDF)
2n5038 2n5039.pdf

Order this documentMOTOROLAby 2N5038/DSEMICONDUCTOR TECHNICAL DATA2N5038*2N5039NPN Silicon Transistors*Motorola Preferred Device. . . fast switching speeds and high current capacity ideally suit these parts for use inswitching regulators, inverters, wideband amplifiers and power oscillators in20 AMPEREindustrial and commercial applications.NPN SILICONPOWER TRANSIS
2n5038.pdf

2N5038HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPNtransistors in Jedec TO-3 metal case. They areespecially intended for high current and switching1applications.2TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collect
2n5038g.pdf

2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)
2n5038.pdf

2N5038NPN Silicon TransistorsFast switching speeds and high current capacity ideally suit theseparts for use in switching regulators, inverters, wide-band amplifiersand power oscillators in industrial and commercial applications.Featureshttp://onsemi.com High Speed - tf = 0.5 ms (Max) High Current - IC(max) = 30 Amps20 AMPERE Low Saturation - VCE(sat) = 2.5 V (Max)
Otros transistores... 2N5025 , 2N5026 , 2N5027 , 2N5028 , 2N5029 , 2N502A , 2N502B , 2N503 , 13003 , 2N5031 , 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2N5037 , 2N5038 , 2N5038-1 .
History: BDX23 | NKT108 | DTC123JEB | KRC663U | 2SB443A | 2SC765
History: BDX23 | NKT108 | DTC123JEB | KRC663U | 2SB443A | 2SC765



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
60n60 mosfet | 2sc2412 | 2sc372 | 2sd400 datasheet | k2645 | tip3055 equivalent | 3sk73 | 13n10 mosfet